Steady-state behavior of class-E amplifier outside nominal operation taking into account MOSFET-body-diode effect
Tomoharu Nagashima and Hiroo Sekiya
Journal of Signal Prosessing, vol.16, no.4, July, 2012. [pdf document]

<Abstract>

We present steady-state analysis for the class-E power amplifier outside the class-E zero-voltage switching and zero-derivative switching (ZVS/ZDS) conditions. The analytical expressions in this paper include the MOSFET-body-diode effect. By carrying out circuit experiments, it is shown that the analytical predictions agreed with the experimental results quantitatively, which indicates the validity of the analytical expressions.