Negative-bias driving voltage for class-E GaN HEMT oscillator using a diode <Abstract> This paper presents a method for achieving a negative bias by adding a diode at gate port of transistor. This method is based on the principle of the minimum power loss of the circuit theory. By applying the introduced method, it is possible to realize the negative-bias driving voltage which is required for driving the GaN HEMT in the class-E oscillator. A design example is shown along with the PSpice-simulation for 5-MHz class-E oscillator with a GaN HEMT. It is seen from the PSpice-simulation results that a negative-bias-feedbackvoltage waveform is observed when a diode is added to the gate and the source of the oscillator in parallel, which shows the validity of the proposed method. |