絶縁型 E 級インバータを用いた SiC MOSFET 用駆動回路の解析的設計
菅野 瞭子，孫 宇，関屋 大雄, 引原 隆士
電子通信エネルギー技術研究会(EE), May, 2016. [pdf document]

<Abstract>

This paper proposes a high-speed SiC MOSFET gate driver with the isolated class-E inverter. Analytical expressions of the proposed driver are given and design procedure using the analytical expressions is presented. A SiC MOSFET is driven by a sinusoidal drive voltage because the proposed driver is a resonant driver. 7 MHz isolated class-E driver for SCT2450KE SiC MOSFET is designed. Experimental and PSpice-simulation waveforms are agreed with the analytical ones quantitatively, which showed the validity of the analytical expressions and design procedure.