E級ZVSインバータに基づくSiC MOSFET高速駆動回路の解析 <Abstract> This paper analyze a high-speed SiC MOSFET driver based on the class E inverter. The gate input resistance and capacitance of SiC MOSFET are huge so they are included in the circuit parameters for avoiding strain the gate voltage. The driver switch voltage satis es the zero-voltage-switching (ZVS) at turn-on instant for achieving high power-conversion eciency at high frequencies. Additionally, clamp diodes are adopted at the output lter of the driver to obtain a square-wave-like drive voltage. It is explained from the steady-state analysis that voltage shift is caused by simultaneous presence of resonant capacitance and gate capacitance of the driven MOSFET. The explanation is valid for not only class-E driver but other resonant driver circuits. Therefore, it is expected that the given theory can be applied resonant driver designs widely. The validity of the analysis is con rmed by comparisons among analytical, simulated, and experimental results. |