Steady-state analytical expression of voltage shift in resonant drivers with clamp diode <Abstract> Resonant drivers are effective and useful for driving MOSFET at high frequencies. In resonant drivers, a clamp diode is often added between the gate and source terminals of the driven MOSFET. The driving voltage is, however, not clamped but just shifted with bias voltage by adding the diode. The mechanism of the voltage shift has not been explained analytically yet. This paper gives an analytical explanation of the voltage shift. The class-E driver is considered as a concrete example. By carrying out steady-state analysis, it is clarified that the voltage shift oc- curs due to coexistence of resonant and gate capacitances. The explanations are valid for not only the class-E driver but other resonant driver circuits. Therefore, it is expected that the given theory can be applied resonant driver designs widely and effectively. The validity of the analysis is con- firmed by comparisons with PSpice simulation and experi- mental results. |