A design example of class-E based gate driver for high frequency operation of SiC power MOSFET
Michihiro Shintani, Yuchong Sun, Hiroo Sekiya, and Takashi Sato
2016 International Symposium on Nonlinear Theory and Its Application (NOLTA2016), pp.181, Nov., 2016. [pdf document]

<Abstract>

Design of a class-E based gate driver has been presented for high frequency power converters using SiC power MOSFETs. Through numerical experiments, it is demonstrated that the proposed gate driver can eliminate its switching loss by zero voltage switching (ZVS) operation.