D‹‰ƒCƒ“ƒo[ƒ^—pSiCMOSFET‚‘¬‹ì“®‰ñ˜H‚ÌÝŒv
›–ì—ÄŽqCé°G‹Ô, ŠÖ‰®‘å—Y
”¼“±‘Ì“d—͕ϊ·Œ¤‹†‰ï(SPC), July, 2018. [pdf document]

<Abstract>

This paper proposes the design of a high-frequency soft-switching resonant driver for SiC class-D inverter. The driver is based on an isolated class-E driver. The driver switch voltage satis es the zero-voltage-switching (ZVS) and zero-derivative-switching(ZDS) at turn-on instant for achieving high power-conversion efficiency at high frequencies. Additionally, by the transformer for isolation, both the source gating and floating MOSFETs can be driven. A class-D inverter having both source grounding and floating MOSFETs is applied as the main circuit. The analytical expressions of the proposed driver circuits as well as the design procedure is presented. The usefulness of the proposed driver circuit is shown from experimental measurements.