出力共振フィルタを省略したΦ級駆動回路の解析と実装 <Abstract> The class E driver is expected to be applied to many devices as a driver capable of achieving high power conversion efficiency even at high frequencies. In the class E driver, the voltage applied to the switch is zero at the moment when the switch is switched, and the gradient of the voltage applied to the switch at that moment is also zero (ZVS / ZDS) satisfying the class E switching condition, whereby high power Thereby ensuring conversion efficiency. In the past research, we proposed a circuit that can easily design the duty ratio on the drive circuit side according to the main circuit side by using the switch voltage of the E class circuit as it is as the drive signal of the main circuit, but in the class E circuit, The maximum value of the voltage applied to the electrode is large, and problems remain in terms of cost. Therefore, we propose and design and implement a drive circuit for SiC MOSFET. The class Φ circuit is a circuit that can suppress the maximum voltage applied to the switch by injecting harmonic components into the current flowing into the switch by adding a harmonic resonance circuit in parallel with the switch. Furthermore, in this research we propose applying the class Φ circuit as a driving circuit for SiC MOSFET, analyze it, confirm the validity of the analysis by comparison with the circuit experiment waveform. |