MOSFETの寄生容量を考慮したE級発振器の解析と設計
海老原史弥, 魏秀欽, 関屋大雄
電気学会産業応用部門大会, Aug., 2019. [pdf document]

<Abstract>

This paper presents analytical expressions to satisfy the class-E zero-voltage-switching and zero-derivative-switching (ZVS/ZDS) conditions in the class-E oscillator, taking into account the MOSFET gate-to-drain and the drain-to-source parasitic capacitances. A design example is given along with the experimental waveforms at 8.22 W output power and 4 MHz operating frequency. The switch-voltage waveform from the circuit experiment satisfy the class-E ZVS/ZDS conditions. It is seen from the experimental results that the analytical prediction agreed with the experimental ones quantitatively, which validated the accuracy and effectiveness of the analytical expressions presented in this paper.