E級インバータに基づいたSiC MOSFET高速駆動回路の一検討 <Abstract> This paper presents a high-speed SiC MOSFET driver based on the class E inverter. The gate input resistance and capacitance of SiC MOSFET are included in the circuit parameters for avoiding strain the gate voltage. The driver switch voltage satisfies the zero-voltage-switching (ZVS) at turn-on instant for achieving high power-conversion efficiency at high frequencies. Additionally, clamp diodes are adopted at the output filter of the driver to obtain a square-wave-like drive voltage. It is shown that the proposed driver has a trade-off relationship between driver-voltage shape and power-conversion efficiency, . The design example along with experimental waveforms is shown in this paper. It was possible in the laboratory experiments to drive the SiC MOSFET at 7 MHz and 13 MHz frequencies, which showed effectiveness and validity of the proposed driver and its design procedure. |